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| inchange semiconductor isc product specification isc silicon npn power transistor BUT11FI description high voltage high speed switching applications converters inverters switching regulators motor control systems absolute maximum ratings (t a =25 ) symbol parameter value unit v ces collector-emitter voltage v be = 0 850 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current 2 a i bm base current-peak 4 a p c collector power dissipation @t c =25 35 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.57 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUT11FI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 400 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.6a b 1.5 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.3 v i ces collector cutoff current v ce = 850v; v be = 0 v ce = 850v; v be = 0; t j = 125 1.0 2.0 ma i ebo emitter cutoff current v eb = 9v; i c = 0 10 ma h fe-1 dc current gain i c = 5ma; v ce = 5v 10 35 h fe-2 dc current gain i c = 0.5a; v ce = 5v 10 35 switching times; resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c = 2.5a; i b1 = -i b2 = 0.5a; v cc = 250v 0.8 s isc website www.iscsemi.cn |
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